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The electrical properties of junctions between aluminium and doped polypyrrole

Tipo de material: TextoTextoSeries ; Journal of Physics. D: Applied Physics, 29, p.2971-2975, 1996Trabajos contenidos:
  • Bantikassegn, W
  • Inganäs, O
Recursos en línea: Resumen: Polypyrrole (PPy)doped with small anions like or large polymeric anions such as poly(styrenesulphonate)forms a conducting organic solid. The electrical properties of metal contacts to this material were evaluated by current - voltage characteristics and impedance spectroscopy measurements. The I - V characteristics of the -doped device was symmetrical but non-ohmic, while that of the -doped diode was rectifying. The complex impedance spectra of -doped structures showed two partially overlapping semi-circles, which revealed the existence of two distinct regions at the metal/doped PPy junctions. They were modelled by an equivalent circuit consisting of two arallel RC circuits in series representing a thin insulating interfacial layer and a depletion region. The impedance spectra of -doped devices manifested a single semi-circle whose diameter depended on the bias voltage. In this case, the thin interfacial non-conducting layer was absent.
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Polypyrrole (PPy)doped with small anions like or large polymeric anions such as poly(styrenesulphonate)forms a conducting organic solid. The electrical properties of metal contacts to this material were evaluated by current - voltage characteristics and impedance spectroscopy measurements. The I - V characteristics of the -doped device was symmetrical but non-ohmic, while that of the -doped diode was rectifying. The complex impedance spectra of -doped structures showed two partially overlapping semi-circles, which revealed the existence of two distinct regions at the metal/doped PPy junctions. They were modelled by an equivalent circuit consisting of two arallel RC circuits in series representing a thin insulating interfacial layer and a depletion region. The impedance spectra of -doped devices manifested a single semi-circle whose diameter depended on the bias voltage. In this case, the thin interfacial non-conducting layer was absent.

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