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Device Applications of Silicon Nanocrystals and Nanostructures [electronic resource] / edited by Nobuyoshi Koshida.

Por: Colaborador(es): Tipo de material: TextoTextoSeries Nanostructure Science and TechnologyEditor: Boston, MA : Springer US, 2009Descripción: online resourceTipo de contenido:
  • text
Tipo de medio:
  • computer
Tipo de soporte:
  • online resource
ISBN:
  • 9780387786896
  • 99780387786896
Tema(s): Formatos físicos adicionales: Printed edition:: Sin títuloClasificación CDD:
  • 620.115 23
Recursos en línea:
Contenidos:
Si-Rich Dielectrics for Active Photonic Devices -- Nanocrystalline Si EL Devices -- Surface and Superlattice -- Optical Gain and Lasing in Low Dimensional Silicon: The Quest for an Injection Laser -- Silicon Single-Electron Devices -- Room Temperature Silicon Spin-Based Transistors -- Electron Transport in Nanocrystalline Silicon -- Silicon Nanocrystal Nonvolatile Memories -- Nanocrystalline Silicon Ballistic Electron Emitter -- Porous Silicon Optical Label-Free Biosensors -- Ultrasonic Emission from Nanocrystalline Porous Silicon.
En: Springer eBooksResumen: Recent developments in the technology of silicon nanocrystals and silicon nanostructures, where quantum-size effects are important, are systematically described including examples of device applications. Due to the strong quantum confinement effect, the material properties are freed from the usual indirect- or direct-bandgap regime, and the optical, electrical, thermal, and chemical properties of these nanocrystalline and nanostructured semiconductors are drastically changed from those of bulk silicon. In addition to efficient visible luminescence, various other useful material functions are induced in nanocrystalline silicon and periodic silicon nanostructures. Some novel devices and applications, in fields such as photonics (electroluminescence diode, microcavity, and waveguide), electronics (single-electron device, spin transistor, nonvolatile memory, and ballistic electron emitter), acoustics, and biology, have been developed by the use of these quantum-induced functions in ways different from the conventional scaling principle for ULSI. Key Features: Offers the first comprehensive treatment of recent advances in quantum-sized silicon device technology Presents systematic and vivid descriptions from a technological viewpoint, providing a realistic perspective on forthcoming silicon device concepts in the post-scaling era Shows how silicon nanocrystal technology is fundamental to the future of silicon electronics, optoelectronics, and photonics Reviews optimal strategies for developing the next generation of devices for microelectronics, photonics, acoustics, and biology
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Item type Current library Collection Call number Status Date due Barcode
Libros electrónicos Libros electrónicos CICY Libro electrónico Libro electrónico 620.115 (Browse shelf(Opens below)) Available

Si-Rich Dielectrics for Active Photonic Devices -- Nanocrystalline Si EL Devices -- Surface and Superlattice -- Optical Gain and Lasing in Low Dimensional Silicon: The Quest for an Injection Laser -- Silicon Single-Electron Devices -- Room Temperature Silicon Spin-Based Transistors -- Electron Transport in Nanocrystalline Silicon -- Silicon Nanocrystal Nonvolatile Memories -- Nanocrystalline Silicon Ballistic Electron Emitter -- Porous Silicon Optical Label-Free Biosensors -- Ultrasonic Emission from Nanocrystalline Porous Silicon.

Recent developments in the technology of silicon nanocrystals and silicon nanostructures, where quantum-size effects are important, are systematically described including examples of device applications. Due to the strong quantum confinement effect, the material properties are freed from the usual indirect- or direct-bandgap regime, and the optical, electrical, thermal, and chemical properties of these nanocrystalline and nanostructured semiconductors are drastically changed from those of bulk silicon. In addition to efficient visible luminescence, various other useful material functions are induced in nanocrystalline silicon and periodic silicon nanostructures. Some novel devices and applications, in fields such as photonics (electroluminescence diode, microcavity, and waveguide), electronics (single-electron device, spin transistor, nonvolatile memory, and ballistic electron emitter), acoustics, and biology, have been developed by the use of these quantum-induced functions in ways different from the conventional scaling principle for ULSI. Key Features: Offers the first comprehensive treatment of recent advances in quantum-sized silicon device technology Presents systematic and vivid descriptions from a technological viewpoint, providing a realistic perspective on forthcoming silicon device concepts in the post-scaling era Shows how silicon nanocrystal technology is fundamental to the future of silicon electronics, optoelectronics, and photonics Reviews optimal strategies for developing the next generation of devices for microelectronics, photonics, acoustics, and biology

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