Fabrication and evaluation of SiC inverter using SiC-MOSFET 

 -  Proceedings of the International Conference on Power Electronics and Drive Systems, p.(6527171), 2013 .
<br/><br/> This paper deals with device characteristics of SiC-MOSFET (600 V, 10 A)and efficiency characteristics of SiC inverter when the motor is driven as compared respectively with Si-MOSFET and Si inverter. As a result, it was found that on-resistance of SiC-MOSFET is smaller than that of Si-MOSFET, and switching loss of SiC-MOSEFET is approximately 1/3 compared with Si-MOSFET. It was also found that the SiC inverter is operated at high efficiency about 7.3 percent than the Si inverter at the switching frequency of 100 kHz. 
<br/><br/><label>Subjects--Topical Terms: </label><br/>MOSFET DEVICES<br/>POWER ELECTRONICS<br/>SILICON