TY  - BOOK
AU  - Yamane,A.
AU  - Koyanagi,K.
AU  - Kozako,M.
AU  - Fuji,K.
AU  - Hikita,M.
TI  - Fabrication and evaluation of SiC inverter using SiC-MOSFET
KW  - MOSFET DEVICES
KW  - POWER ELECTRONICS
KW  - SILICON
N2  - This paper deals with device characteristics of SiC-MOSFET (600 V, 10 A)and efficiency characteristics of SiC inverter when the motor is driven as compared respectively with Si-MOSFET and Si inverter. As a result, it was found that on-resistance of SiC-MOSFET is smaller than that of Si-MOSFET, and switching loss of SiC-MOSEFET is approximately 1/3 compared with Si-MOSFET. It was also found that the SiC inverter is operated at high efficiency about 7.3 percent than the Si inverter at the switching frequency of 100 kHz
UR  - https://drive.google.com/file/d/1Rrekg6mOmh8NcanefM0OoBLGwvBqfAiX/view?usp=drivesdk
ER  -