000			01356nam a2200253Ia 4500
003			MX-MdCICY
005			20250625160146.0
040			_cCICY
090			_aB-16163
245	1	0	_aFabrication and evaluation of SiC inverter using SiC-MOSFET
490	0		_vProceedings of the International Conference on Power Electronics and Drive Systems, p.(6527171), 2013
520	3		_aThis paper deals with device characteristics of SiC-MOSFET (600 V, 10 A)and efficiency characteristics of SiC inverter when the motor is driven as compared respectively with Si-MOSFET and Si inverter. As a result, it was found that on-resistance of SiC-MOSFET is smaller than that of Si-MOSFET, and switching loss of SiC-MOSEFET is approximately 1/3 compared with Si-MOSFET. It was also found that the SiC inverter is operated at high efficiency about 7.3 percent than the Si inverter at the switching frequency of 100 kHz.
650	1	4	_aMOSFET DEVICES
650	1	4	_aPOWER ELECTRONICS
650	1	4	_aSILICON
700	1	2	_aYamane, A.
700	1	2	_aKoyanagi, K.
700	1	2	_aKozako, M.
700	1	2	_aFuji, K.
700	1	2	_aHikita, M.
856	4	0	_uhttps://drive.google.com/file/d/1Rrekg6mOmh8NcanefM0OoBLGwvBqfAiX/view?usp=drivesdk _zPara ver el documento ingresa a Google con tu cuenta: @cicy.edu.mx
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