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090			_aB-19230
245	1	0	_aDielectric breakdown I: A review of oxide breakdown
490	0		_vMicroelectronics Journal, 27(7), p.611-622., 1996
520	3		_aThis paper gives an overview of the dielectric breakdown in thin oxide layers on silicon. First test methods are discussed, followed by their application to the estimation of the oxide lifetime. The main part of the paper is devoted to the physical background of the intrinsic breakdown. Finally, defect-related or extrinsic breakdown is discussed.
700	1	2	_aVerweij, J. F.
700	1	2	_aKlootwijk, J. H.
856	4	0	_uhttps://drive.google.com/file/d/1R_v37d-Es1sq-UKh1AbCbYsKdLHk5Sus/view?usp=drivesdk _zPara ver el documento ingresa a Google con tu cuenta: @cicy.edu.mx
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