000			04718nam a22005055i 4500
001			978-0-387-24313-9
003			DE-He213
005			20250710083931.0
007			cr nn 008mamaa
008			100301s2005 xxu| s |||| 0|eng d
020			_a9780387243139 _a99780387243139
024	7		_a10.1007/b105122 _2doi
082	0	4	_a621.3815 _223
100	1		_aCroon, Jeroen A. _eauthor.
245	1	0	_aMatching Properties of Deep Sub-Micron MOS Transistors _h[recurso electrónico] / _cby Jeroen A. Croon, Willy Sansen, Herman E. Maes.
264		1	_aBoston, MA : _bSpringer US, _c2005.
300			_aXI, 206 p. _bonline resource.
336			_atext _btxt _2rdacontent
337			_acomputer _bc _2rdamedia
338			_arecurso en línea _bcr _2rdacarrier
347			_atext file _bPDF _2rda
490	1		_aThe Kluwer International Series in Engineering and Computer Science, Analog Circuits and Signal Processing, _x0893-3405 ; _v851
505	0		_aIntroduction: Matching analysis. Importance for circuit design. State of the art. Research objectives. Outline of this book -- Measurement and Modeling of Mismatch. Measurement setup. Experimental setup. Modeling of mismatch in the drain current. Width and length dependence. Example: Yield of a current-steering D/A converter. Conclusions -- Parameter Extraction. Extraction methods. Experimental setup. Comparison of extraction methods. Future issues. Conclusions -- Physical Origins of Mosfet Mismatch. Basic operation of the MOS transistor. Mismatch in the drain current. Physical origins of fluctuations. Conclusions -- Technological Aspects. Technology descriptions. Impact of the gate. Impact of the halo implantation. Comparison of di®erent CMOS technologies. Alternative device concepts. Conclusions -- Impact of Line-Edge Roughness. Characterization of line-edge roughness. Modeling the impact of line-width roughness. Experimental investigation of the impact of LWR. Prediction of the impact of LWR and guidelines. Conclusions -- Conclusions, Future Work and Outlook. Conclusions. Future work -- Outlook.
520			_aMatching Properties of Deep Sub-Micron MOS Transistors examines this interesting phenomenon. Microscopic fluctuations cause stochastic parameter fluctuations that affect the accuracy of the MOSFET. For analog circuits this determines the trade-off between speed, power, accuracy and yield. Furthermore, due to the down-scaling of device dimensions, transistor mismatch has an increasing impact on digital circuits. The matching properties of MOSFETs are studied at several levels of abstraction: A simple and physics-based model is presented that accurately describes the mismatch in the drain current. The model is illustrated by dimensioning the unit current cell of a current-steering D/A converter. The most commonly used methods to extract the matching properties of a technology are bench-marked with respect to model accuracy, measurement accuracy and speed, and physical contents of the extracted parameters. The physical origins of microscopic fluctuations and how they affect MOSFET operation are investigated. This leads to a refinement of the generally applied 1/area law. In addition, the analysis of simple transistor models highlights the physical mechanisms that dominate the fluctuations in the drain current and transconductance. The impact of process parameters on the matching properties is discussed. The impact of gate line-edge roughness is investigated, which is considered to be one of the roadblocks to the further down-scaling of the MOS transistor. Matching Properties of Deep Sub-Micron MOS Transistors is aimed at device physicists, characterization engineers, technology designers, circuit designers, or anybody else interested in the stochastic properties of the MOSFET.
650		0	_aENGINEERING.
650		0	_aPHYSICS.
650		0	_aELECTRONICS.
650		0	_aSYSTEMS ENGINEERING.
650	1	4	_aENGINEERING.
650	2	4	_aCIRCUITS AND SYSTEMS.
650	2	4	_aPHYSICS, GENERAL.
650	2	4	_aPHYSICS AND APPLIED PHYSICS IN ENGINEERING.
650	2	4	_aELECTRONIC AND COMPUTER ENGINEERING.
650	2	4	_aELECTRONICS AND MICROELECTRONICS, INSTRUMENTATION.
700	1		_aSansen, Willy. _eauthor.
700	1		_aMaes, Herman E. _eauthor.
710	2		_aSpringerLink (Online service)
773	0		_tSpringer eBooks
776	0	8	_iPrinted edition: _z9780387243146
830		0	_aThe Kluwer International Series in Engineering and Computer Science, Analog Circuits and Signal Processing, _x0893-3405 ; _v851
856	4	0	_uhttp://dx.doi.org/10.1007/b105122 _zVer el texto completo en las instalaciones del CICY
912			_aZDB-2-ENG
942			_2ddc _cER
999			_c56336 _d56336