000			03695nam a22005055i 4500
001			978-0-387-28843-7
003			DE-He213
005			20250710083943.0
007			cr nn 008mamaa
008			100301s2006 xxu| s |||| 0|eng d
020			_a9780387288437 _a99780387288437
024	7		_a10.1007/0-387-28843-0 _2doi
100	1		_aLaconte, J. _eauthor.
245	1	0	_aMicromachined Thin-Film Sensors for SOI-CMOS Co-Integration _h[recurso electrónico] / _cby J. Laconte, D. Flandre, J. -P. Raskin.
264		1	_aBoston, MA : _bSpringer US, _c2006.
300			_aXIII, 292 p. _bonline resource.
336			_atext _btxt _2rdacontent
337			_acomputer _bc _2rdamedia
338			_arecurso en línea _bcr _2rdacarrier
347			_atext file _bPDF _2rda
505	0		_aIntroduction: Context and motivations -- Introduction: Context and motivations -- Techniques and materials -- Silicon bulk micromachining with TMAH -- Thin dielectric films stress extraction -- Microsensors -- Low power microhotplate as basic cell -- Microheater based flow sensor -- Gas Sensors on microhotplate -- SOI-CMOS compatibility validation -- Conclusions and outlook -- Conclusions and outlook.
520			_aCo-integration of sensors with their associated electronics on a single silicon chip may provide many significant benefits regarding performance, reliability, miniaturization and process simplicity without significantly increasing the total cost. Micromachined Thin-Film Sensors for SOI-CMOS Co-integration covers the challenges and interests and demonstrates the successful co-integration of gas-flow sensors on dielectric membrane, with their associated electronics, in CMOS-SOI technology. We firstly investigate the extraction of residual stress in thin layers and in their stacking and the release, in post-processing, of a 1 µm-thick robust and flat dielectric multilayered membrane using Tetramethyl Ammonium Hydroxide (TMAH) silicon micromachining solution. The optimization of its selectivity towards aluminum is largely demonstrated. The second part focuses on sensors design and characteristics. A novel loop-shape polysilicon microheater is designed and built in a CMOS-SOI standard process. High thermal uniformity, low power consumption and high working temperature are confirmed by extensive measurements. The additional gas flow sensing layers are judiciously chosen and implemented. Measurements in the presence of a nitrogen flow and gas reveal fair sensitivity on a large flow velocity range as well as good response to many gases. Finally, MOS transistors suspended on released dielectric membranes are presented and fully characterized as a concluding demonstrator of the co-integration in SOI technology.
650		0	_aENGINEERING.
650		0	_aPARTICLES (NUCLEAR PHYSICS).
650		0	_aPHYSICAL OPTICS.
650		0	_aELECTRONICS.
650		0	_aSYSTEMS ENGINEERING.
650		0	_aSURFACES (PHYSICS).
650	1	4	_aENGINEERING.
650	2	4	_aPHYSICS AND APPLIED PHYSICS IN ENGINEERING.
650	2	4	_aELECTRONICS AND MICROELECTRONICS, INSTRUMENTATION.
650	2	4	_aCIRCUITS AND SYSTEMS.
650	2	4	_aSOLID STATE PHYSICS AND SPECTROSCOPY.
650	2	4	_aAPPLIED OPTICS, OPTOELECTRONICS, OPTICAL DEVICES.
650	2	4	_aSURFACES AND INTERFACES, THIN FILMS.
700	1		_aFlandre, D. _eauthor.
700	1		_aRaskin, J. -P. _eauthor.
710	2		_aSpringerLink (Online service)
773	0		_tSpringer eBooks
776	0	8	_iPrinted edition: _z9780387288420
856	4	0	_uhttp://dx.doi.org/10.1007/0-387-28843-0 _zVer el texto completo en las instalaciones del CICY
912			_aZDB-2-ENG
942			_2ddc _cER
999			_c56881 _d56881