| 000 | 02915nam a22004695i 4500 | ||
|---|---|---|---|
| 001 | 978-0-387-47314-7 | ||
| 003 | DE-He213 | ||
| 005 | 20250710084001.0 | ||
| 007 | cr nn 008mamaa | ||
| 008 | 100715s2008 xxu| s |||| 0|eng d | ||
| 020 |
_a9780387473147 _a99780387473147 |
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| 024 | 7 |
_a10.1007/978-0-387-47314-7 _2doi |
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| 082 | 0 | 4 |
_a621.042 _223 |
| 100 | 1 |
_aBaliga, B. Jayant. _eauthor. |
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| 245 | 1 | 0 |
_aFundamentals of Power Semiconductor Devices _h[recurso electrónico] / _cby B. Jayant Baliga. |
| 264 | 1 |
_aBoston, MA : _bSpringer US, _c2008. |
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| 300 |
_aXXIV, 1072p. 900 illus., 450 illus. in color. _bonline resource. |
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| 336 |
_atext _btxt _2rdacontent |
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| 337 |
_acomputer _bc _2rdamedia |
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| 338 |
_arecurso en línea _bcr _2rdacarrier |
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| 347 |
_atext file _bPDF _2rda |
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| 505 | 0 | _aMaterial Properties and Transport Physics -- Breakdown Voltage -- Schottky Rectifiers -- P-i-N Rectifiers -- Power MOSFETs -- Bipolar Junction Transistors -- Thyristors -- Thyristors -- Synopsis. | |
| 520 | _aFundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are developed. The treatment focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices. Drawing upon years of practical experience and using numerous examples and illustrative applications, B. Jayant Baliga discusses: Numerical simulation examples to elucidate the operating physics and validate the models Device performance attributes that allow practicing engineers in the industry to develop products Treatment of all types of power rectifiers and transistors to create a comprehensive reference in the field Fundamentals of Power Semiconductor Devices will be of interest to practicing engineers in the power semiconductor device community and can also serve as an ideal textbook for teaching courses on power semiconductor devices due to the extensive analytical treatment provided for all device structures. | ||
| 650 | 0 | _aENGINEERING. | |
| 650 | 0 | _aELECTRONICS. | |
| 650 | 0 | _aSYSTEMS ENGINEERING. | |
| 650 | 0 | _aELECTRIC ENGINEERING. | |
| 650 | 1 | 4 | _aENGINEERING. |
| 650 | 2 | 4 | _aENERGY TECHNOLOGY. |
| 650 | 2 | 4 | _aCIRCUITS AND SYSTEMS. |
| 650 | 2 | 4 | _aELECTRONICS AND MICROELECTRONICS, INSTRUMENTATION. |
| 650 | 2 | 4 | _aSOLID STATE PHYSICS. |
| 650 | 2 | 4 | _aSPECTROSCOPY AND MICROSCOPY. |
| 650 | 2 | 4 | _aENERGY, GENERAL. |
| 710 | 2 | _aSpringerLink (Online service) | |
| 773 | 0 | _tSpringer eBooks | |
| 776 | 0 | 8 |
_iPrinted edition: _z9780387473130 |
| 856 | 4 | 0 |
_uhttp://dx.doi.org/10.1007/978-0-387-47314-7 _zVer el texto completo en las instalaciones del CICY |
| 912 | _aZDB-2-ENG | ||
| 942 |
_2ddc _cER |
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_c57730 _d57730 |
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