000			04346nam a22004815i 4500
001			978-0-387-68319-5
003			DE-He213
005			20250710084006.0
007			cr nn 008mamaa
008			100301s2008 xxu| s |||| 0|eng d
020			_a9780387683195 _a99780387683195
024	7		_a10.1007/978-0-387-68319-5 _2doi
082	0	4	_a621.381 _223
100	1		_aWood, Colin. _eeditor.
245	1	0	_aPolarization Effects in Semiconductors _h[recurso electrónico] : _bFrom Ab InitioTheory to Device Applications / _cedited by Colin Wood, Debdeep Jena.
264		1	_aBoston, MA : _bSpringer US, _c2008.
300			_bonline resource.
336			_atext _btxt _2rdacontent
337			_acomputer _bc _2rdamedia
338			_arecurso en línea _bcr _2rdacarrier
347			_atext file _bPDF _2rda
505	0		_aTheoretical Approach to Polarization Effects in Semiconductors -- Polarization Induced Effects in GaN-based Heterostructures and Novel Sensors -- Lateral and Vertical Charge Transport in Polar Nitride Heterostructures -- Polarization Effects on Low-Field Transport & Mobility in III-V Nitride HEMTs -- Local Polarization Effects in Nitride Heterostructures and Devices -- Polarization in Wide Bandgap Semiconductors and their Characterization by Scanning Probe Microscopy -- Functionally Graded Polar Heterostuctures: New Materials for Multifunctional Devices -- Polarization in GaN Based Heterostructures and Heterojunction Field Effect Transistors (HFETs) -- Effects of Polarization in Optoelectronic Quantum Structures.
520			_aPolarization Effects in Semiconductors: From Ab Initio Theory to Device Applications presents the latest understanding of the solid state physics, electronic implications and practical applications of the unique spontaneous or pyro-electric polarization charge of wurtzite compound semiconductors, and associated piezo-electric effects in strained thin film heterostructures. These heterostructures are used in wide band gap semiconductor based sensors, in addition to various electronic and opto-electronic semiconductor devices. The book covers the ab initio theory of polarization in cubic and hexagonal semiconductors, growth of thin film GaN, GaN/AlGaN GaAlN/ AlGaInN, and other nitrides, and SiC heterostructures. It discusses the effects of spontaneous and piezoelectric polarization on band diagrams and electronic properties of abrupt and compositionally graded heterostructures, electronic characterization of polarization-induced charge distributions by scanning-probe spectroscopies, and gauge factors and strain effects. In addition, polarization in extended defects, piezo-electric strain/charge engineering, and application to device design and processing are covered. The effects of polarization on the fundamental electron transport properties, and on the basic optical transitions are described. The crucial role of polarization in devices such as high electron mobility transistors (HEMTs) and light-emitting diodes (LEDs) is covered. The chapters are authored by professors and researchers in the fields of physics, applied physics and electrical engineering, who worked for 5 years under the "Polarization Effects in Semiconductors" DOD funded Multi Disciplinary University Research Initiative. This book will be of interest to graduate students and researchers working in the field of wide-bandgap semiconductor physics and their device applications. It will also be useful for practicing engineers in the field of wide-bandgap semiconductor device research and development.
650		0	_aENGINEERING.
650		0	_aELECTRONICS.
650		0	_aSYSTEMS ENGINEERING.
650		0	_aOPTICAL MATERIALS.
650	1	4	_aENGINEERING.
650	2	4	_aELECTRONICS AND MICROELECTRONICS, INSTRUMENTATION.
650	2	4	_aSOLID STATE PHYSICS.
650	2	4	_aSPECTROSCOPY AND MICROSCOPY.
650	2	4	_aCIRCUITS AND SYSTEMS.
650	2	4	_aOPTICAL AND ELECTRONIC MATERIALS.
650	2	4	_aENGINEERING, GENERAL.
700	1		_aJena, Debdeep. _eeditor.
710	2		_aSpringerLink (Online service)
773	0		_tSpringer eBooks
776	0	8	_iPrinted edition: _z9780387368313
856	4	0	_uhttp://dx.doi.org/10.1007/978-0-387-68319-5 _zVer el texto completo en las instalaciones del CICY
912			_aZDB-2-ENG
942			_2ddc _cER
999			_c57953 _d57953