000			03452nam a22004575i 4500
001			978-0-387-69010-0
003			DE-He213
005			20250710084009.0
007			cr nn 008mamaa
008			100301s2009 xxu| s |||| 0|eng d
020			_a9780387690100 _a99780387690100
024	7		_a10.1007/978-0-387-69010-0 _2doi
082	0	4	_a621.3815 _223
100	1		_aEl-Kareh, Badih. _eauthor.
245	1	0	_aSilicon Devices and Process Integration _h[recurso electrónico] : _bDeep Submicron and Nano-Scale Technologies / _cby Badih El-Kareh.
264		1	_aBoston, MA : _bSpringer US, _c2009.
300			_bonline resource.
336			_atext _btxt _2rdacontent
337			_acomputer _bc _2rdamedia
338			_arecurso en línea _bcr _2rdacarrier
347			_atext file _bPDF _2rda
505	0		_aProperties of the Silicon Crystal. Valence-bond and energy-band models. Thermal equilibrium statistics. Carrier transport mechanisms. Non-equilibrium conditions and carrier lifetime -- Junctions and Contacts. Ohmic, non-ohmic, and rectifying contacts. PN junctions, homo- and hetero-junctions. Contact und junction characterization, parameter extraction. Varactors -- Junction Field-Effect Transistor, JFET. Structure and mode of operation. Physics of JFET. JFET characterization and parameter extraction. High-voltage applications. Parasitic effects -- Bipolar Junction Transistor, BJT. Structure and mode of operation. Physics of BJT. Heterojunction Bipolar Transistor, HBT. Transistor characterization and parameter extraction. High-voltage applications -- Parasitic effects.
520			_aSilicon Devices and Process Integration is compiled from industrial and academic lecture notes and reflects years of experience in the development of silicon devices. It is prepared specifically for engineers and scientists in semiconductor research, development and manufacturing. It is also suitable for a one-semester course in electrical engineering and materials science at the upper undergraduate or lower graduate level. The book covers both the theoretical and practical aspects of modern silicon devices and the relationship between their electrical properties and processing conditions. Topics covered include: MOS structure, parameter extraction - Short and narrow-channel effects - CMOS mobility enhancement techniques - High-K gate dielectrics, advanced gate stacks - Low-K dielectrics and Cu interconnects - Analog devices and passive components - CMOS and BiCMOS process integration - DRAM, SRAM and NVM cell structures. The book covers state-of-the-art silicon devices and integrated process technologies. It represents a comprehensive discussion of modern silicon devices, their characteristics, and interactions with process parameters.
650		0	_aENGINEERING.
650		0	_aCOMPUTER ENGINEERING.
650		0	_aELECTRONICS.
650		0	_aSYSTEMS ENGINEERING.
650		0	_aMATERIALS.
650	1	4	_aENGINEERING.
650	2	4	_aCIRCUITS AND SYSTEMS.
650	2	4	_aELECTRONICS AND MICROELECTRONICS, INSTRUMENTATION.
650	2	4	_aELECTRICAL ENGINEERING.
650	2	4	_aMATERIALS SCIENCE, GENERAL.
710	2		_aSpringerLink (Online service)
773	0		_tSpringer eBooks
776	0	8	_iPrinted edition: _z9780387367989
856	4	0	_uhttp://dx.doi.org/10.1007/978-0-387-69010-0 _zVer el texto completo en las instalaciones del CICY
912			_aZDB-2-ENG
942			_2ddc _cER
999			_c58075 _d58075