000			04128nam a22005295i 4500
001			978-0-387-78606-3
003			DE-He213
005			20251006084419.0
007			cr nn 008mamaa
008			100715s2009 xxu| s |||| 0|eng d
020			_a9780387786063
020			_a99780387786063
024	7		_a10.1007/978-0-387-78606-3 _2doi
082	0	4	_a620.115 _223
100	1		_aGhatak, Kamakhya Prasad. _eauthor.
245	1	0	_aPhotoemission from Optoelectronic Materials and their Nanostructures _h[electronic resource] / _cby Kamakhya Prasad Ghatak, Sitangshu Bhattacharya, Debashis De.
264		1	_aNew York, NY : _bSpringer New York : _bImprint: Springer, _c2009.
300			_aCCCXXIX, 19p. 209 illus. _bonline resource.
336			_atext _btxt _2rdacontent
337			_acomputer _bc _2rdamedia
338			_aonline resource _bcr _2rdacarrier
347			_atext file _bPDF _2rda
490	1		_aNanostructure Science and Technology, _x1571-5744
505	0		_aFundamentals of Photoemission from Wide Gap Materials -- Fundamentals of Photoemission from Quantum Wells in Ultrathin Films and Quantum Well Wires of Various Nonparabolic Materials -- Fundamentals of Photoemission from Quantum Dots of Various Nonparabolic Materials -- Photoemission from Quantum Confined Semiconductor Superlattices -- Photoemission from Bulk Optoelectronic Materials -- Photoemission under Quantizing Magnetic Field from Optoelectronic Materials -- Photoemission from Quantum Wells in Ultrathin Films, Quantum Wires, and Dots of Optoelectronic Materials -- Photoemission from Quantum Confined Effective Mass Superlattices of Optoelectronic Materials -- Photoemission from Quantum Confined Superlattices of Optoelectronic Materials with Graded Interfaces -- Review of Experimental Results -- Conclusion and Future Research.
520			_aPhotoemission from Optoelectronic Materials and Their Nanostructures is the first monograph to investigate the photoemission from low-dimensional nonlinear optical, III-V, II-VI, GaP, Ge, PtSb2, zero-gap, stressed, bismuth, carbon nanotubes, GaSb, IV-VI, Pb1-xGexTe, graphite, Te, II-V, ZnP2, CdP2 , Bi2Te3, Sb, and IV-VI materials. The investigation leads to a discussion of III-V, II-VI, IV-VI and HgTe/CdTe quantum confined superlattices, and superlattices of optoelectronic materials. Photo-excitation changes the band structure of optoelectronic compounds in fundamental ways, which has been incorporated into the analysis of photoemission from macro- and micro-structures of these materials on the basis of newly formulated electron dispersion laws that control the studies of quantum effect devices in the presence of light. The importance of the measurement of band gap in optoelectronic materials in the presence of external photo-excitation has been discussed from this perspective. This monograph contains 125 open-ended research problems which form an integral part of the text and are useful for graduate courses on modern optoelectronics in addition to aspiring Ph.D.'s and researchers in the fields of materials science, computational and theoretical nano-science and -technology, semiconductor optoelectronics, quantized-structures, semiconductor physics and condensed matter physics.
650		0	_aQUANTUM THEORY.
650		0	_aMATERIALS.
650		0	_aNANOTECHNOLOGY.
650		0	_aSURFACES (PHYSICS).
650	1	4	_aMATERIALS SCIENCE.
650	2	4	_aNANOTECHNOLOGY.
650	2	4	_aSURFACES AND INTERFACES, THIN FILMS.
650	2	4	_aMATERIALS SCIENCE, GENERAL.
650	2	4	_aSOLID STATE PHYSICS.
650	2	4	_aSPECTROSCOPY AND MICROSCOPY.
650	2	4	_aQUANTUM PHYSICS.
700	1		_aBhattacharya, Sitangshu. _eauthor.
700	1		_aDe, Debashis. _eauthor.
710	2		_aSpringerLink (Online service)
773	0		_tSpringer eBooks
776	0	8	_iPrinted edition: _z9780387786056
830		0	_aNanostructure Science and Technology, _x1571-5744
856	4	0	_uhttp://dx.doi.org/10.1007/978-0-387-78606-3 _zVer el texto completo en las instalaciones del CICY
912			_aZDB-2-CMS
942			_2ddc _cER
999			_c59090 _d59090