000			03676nam a22004455i 4500
001			978-0-387-78689-6
003			DE-He213
005			20251006084419.0
007			cr nn 008mamaa
008			100301s2009 xxu| s |||| 0|eng d
020			_a9780387786896
020			_a99780387786896
024	7		_a10.1007/978-0-387-78689-6 _2doi
082	0	4	_a620.115 _223
100	1		_aKoshida, Nobuyoshi. _eeditor.
245	1	0	_aDevice Applications of Silicon Nanocrystals and Nanostructures _h[electronic resource] / _cedited by Nobuyoshi Koshida.
264		1	_aBoston, MA : _bSpringer US, _c2009.
300			_bonline resource.
336			_atext _btxt _2rdacontent
337			_acomputer _bc _2rdamedia
338			_aonline resource _bcr _2rdacarrier
347			_atext file _bPDF _2rda
490	1		_aNanostructure Science and Technology, _x1571-5744
505	0		_aSi-Rich Dielectrics for Active Photonic Devices -- Nanocrystalline Si EL Devices -- Surface and Superlattice -- Optical Gain and Lasing in Low Dimensional Silicon: The Quest for an Injection Laser -- Silicon Single-Electron Devices -- Room Temperature Silicon Spin-Based Transistors -- Electron Transport in Nanocrystalline Silicon -- Silicon Nanocrystal Nonvolatile Memories -- Nanocrystalline Silicon Ballistic Electron Emitter -- Porous Silicon Optical Label-Free Biosensors -- Ultrasonic Emission from Nanocrystalline Porous Silicon.
520			_aRecent developments in the technology of silicon nanocrystals and silicon nanostructures, where quantum-size effects are important, are systematically described including examples of device applications. Due to the strong quantum confinement effect, the material properties are freed from the usual indirect- or direct-bandgap regime, and the optical, electrical, thermal, and chemical properties of these nanocrystalline and nanostructured semiconductors are drastically changed from those of bulk silicon. In addition to efficient visible luminescence, various other useful material functions are induced in nanocrystalline silicon and periodic silicon nanostructures. Some novel devices and applications, in fields such as photonics (electroluminescence diode, microcavity, and waveguide), electronics (single-electron device, spin transistor, nonvolatile memory, and ballistic electron emitter), acoustics, and biology, have been developed by the use of these quantum-induced functions in ways different from the conventional scaling principle for ULSI. Key Features: Offers the first comprehensive treatment of recent advances in quantum-sized silicon device technology Presents systematic and vivid descriptions from a technological viewpoint, providing a realistic perspective on forthcoming silicon device concepts in the post-scaling era Shows how silicon nanocrystal technology is fundamental to the future of silicon electronics, optoelectronics, and photonics Reviews optimal strategies for developing the next generation of devices for microelectronics, photonics, acoustics, and biology
650		0	_aOPTICAL MATERIALS.
650		0	_aNANOTECHNOLOGY.
650	1	4	_aMATERIALS SCIENCE.
650	2	4	_aNANOTECHNOLOGY.
650	2	4	_aOPTICAL AND ELECTRONIC MATERIALS.
650	2	4	_aSTRONGLY CORRELATED SYSTEMS, SUPERCONDUCTIVITY.
710	2		_aSpringerLink (Online service)
773	0		_tSpringer eBooks
776	0	8	_iPrinted edition: _z9780387786889
830		0	_aNanostructure Science and Technology, _x1571-5744
856	4	0	_uhttp://dx.doi.org/10.1007/978-0-387-78689-6 _zVer el texto completo en las instalaciones del CICY
912			_aZDB-2-CMS
942			_2ddc _cER
999			_c59096 _d59096