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Dielectric breakdown I: A review of oxide breakdown

Tipo de material: TextoTextoSeries ; Microelectronics Journal, 27(7), p.611-622., 1996Trabajos contenidos:
  • Verweij, J. F
  • Klootwijk, J. H
Recursos en línea: Resumen: This paper gives an overview of the dielectric breakdown in thin oxide layers on silicon. First test methods are discussed, followed by their application to the estimation of the oxide lifetime. The main part of the paper is devoted to the physical background of the intrinsic breakdown. Finally, defect-related or extrinsic breakdown is discussed.
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This paper gives an overview of the dielectric breakdown in thin oxide layers on silicon. First test methods are discussed, followed by their application to the estimation of the oxide lifetime. The main part of the paper is devoted to the physical background of the intrinsic breakdown. Finally, defect-related or extrinsic breakdown is discussed.

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