Dielectric breakdown I: A review of oxide breakdown

Tipo de material: Texto

TextoSeries ; Microelectronics Journal, 27(7), p.611-622., 1996Trabajos contenidos:

Verweij, J. F
Klootwijk, J. H

Recursos en línea:

Para ver el documento ingresa a Google con tu cuenta: @cicy.edu.mx

Resumen: This paper gives an overview of the dielectric breakdown in thin oxide layers on silicon. First test methods are discussed, followed by their application to the estimation of the oxide lifetime. The main part of the paper is devoted to the physical background of the intrinsic breakdown. Finally, defect-related or extrinsic breakdown is discussed.

Tags from this library: No tags from this library for this title. Log in to add tags.

Average rating: 0.0 (0 votes)

Holdings
Item type	Current library	Collection	Call number	Status	Date due	Barcode
Documentos solicitados	CICY Documento préstamo interbibliotecario	Ref1	B-19230 (Browse shelf(Opens below))	Available

Browsing CICY shelves, Shelving location: Documento préstamo interbibliotecario, Collection: Ref1 Close shelf browser (Hides shelf browser)

Previous	No cover image available	No cover image available	No cover image available	No cover image available	No cover image available	No cover image available	No cover image available	Next
Previous	B-19228 In vitro desiccation tolerance of the epiphytic Ghost Orchid, Dendrophylax lindenii (Lindl.)Benth x. Rolfe	B-19229 A comparative study of Sargassum species from the Yucatan Peninsula coast: morphological and chemical characterisation	B-1923 Senescene in Detached Oat Leaves I. Changes in Free Amino Acid Levels	B-19230 Dielectric breakdown I: A review of oxide breakdown	B-19231 Test Methods for Fibre/Matrix Adhesion in Cellulose Fibre-Reinforced Thermoplastic Composite Materials: A Critical Review	B-19232 Screening of ethnomedicinal plants for their antifungal and nematicidal activities against soil-borne phytopathogens	B-19233 Isolation and characterisation of nematicidal compound, leolorin C, from Leonotis leonurus acetone leaf extract	Next

This paper gives an overview of the dielectric breakdown in thin oxide layers on silicon. First test methods are discussed, followed by their application to the estimation of the oxide lifetime. The main part of the paper is devoted to the physical background of the intrinsic breakdown. Finally, defect-related or extrinsic breakdown is discussed.

There are no comments on this title.

to post a comment.